ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE

Title:

ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE

Document Type and Number:

WIPO Patent Application WO/2012/177762

Kind Code:

A3

Abstract:

A microplasma device of the invention includes a microcavity (16) or microchannel (21, 30) defined at least partially within a thick metal oxide layer (10) consisting essentially of defect free oxide. Electrodes (12, 22a, 22b) are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel upon application of suitable voltage and at least one of the electrodes is encapsulated within the thick metal oxide layer. Large arrays can be formed and are highly robust as lack of microcracks in the oxide avoid dielectric breakdown. A method of fabricating a microcavity or microchannel plasma device of the invention includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide. Powder blasting is preferably used as an efficient removal process that preserves oxide quality.

Inventors:

EDEN J GARY (US)
PARK SUNG-JIN (US)
CHO JIN HOON (US)
SUNG SEUNG HOON (US)
KWAN MIN HWAN (US)

Application Number:

PCT/US2012/043350

Publication Date:

February 14, 2013

Filing Date:

June 20, 2012

Export Citation:

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Assignee:

UNIV ILLINOIS
EDEN J GARY (US)
PARK SUNG-JIN (US)
CHO JIN HOON (US)
SUNG SEUNG HOON (US)
KWAN MIN HWAN (US)

International Classes:

H01J17/04

Foreign References:

US20070052359A1	2007-03-08
US20030230983A1	2003-12-18
US20070210709A1	2007-09-13

Other References: