Title:
BANDGAP REFERENCE SOURCE HAVING LOW OFFSET VOLTAGE AND HIGH PSRR
Document Type and Number:
WIPO Patent Application WO/2016/015523
Kind Code:
A1
Abstract:
A bandgap reference source having a low offset voltage and a high PSRR comprises: a first P tunnel field-effect transistor (MP1), a second P tunnel field-effect transistor (MP2), a third P tunnel field-effect transistor (MP3), a fourth P tunnel field-effect transistor (MP4), a first resistor (R1), a second resistor (R2), a third resistor (R3), a first bipolar transistor (Q1), a second bipolar transistor (Q2) and a voltage feedback circuit (10). The bandgap reference source having a low offset voltage and a high PSRR reduces the influence of tunnel length adjustment effect among various current mirrors, ensures the accuracy of a current multiplication factor, and thus reduces the offset of the output voltage by using a two-layer current mirror structure and increasing offset resistance.
Inventors:
SU SHENGXIN (CN)
DU XINGANG (CN)
YANG XIAOKUN (CN)
YUAN YIDONG (CN)
HU YI (CN)
HE YANG (CN)
LI ZHENGUO (CN)
DU XINGANG (CN)
YANG XIAOKUN (CN)
YUAN YIDONG (CN)
HU YI (CN)
HE YANG (CN)
LI ZHENGUO (CN)
Application Number:
PCT/CN2015/081096
Publication Date:
February 04, 2016
Filing Date:
June 09, 2015
Export Citation:
Assignee:
STATE GRID CORP CHINA SGCC (CN)
BEIJING NARI SMARTCHIP MICROELECTRONICS TECHNOLOGY COMPANY LTD (CN)
BEIJING NARI SMARTCHIP MICROELECTRONICS TECHNOLOGY COMPANY LTD (CN)
International Classes:
G05F3/26
Foreign References:
| CN101083453A | 2007-12-05 | |||
| CN102622038A | 2012-08-01 | |||
| JP2011172213A | 2011-09-01 | |||
| CN201134057Y | 2008-10-15 | |||
| DE10353340A1 | 2005-06-30 | |||
| US6194886B1 | 2001-02-27 | |||
| GB2429307A | 2007-02-21 | |||
| US20040041551A1 | 2004-03-04 | |||
| EP0661616A2 | 1995-07-05 |
Attorney, Agent or Firm:
GENUINEWAYS INC. (CN)
北京中誉威圣知识产权代理有限公司 (CN)
北京中誉威圣知识产权代理有限公司 (CN)
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