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Title:
BIS(ETHYLCYCLOPENTADIENYL) TIN, RAW MATERIALS FOR CHEMICAL VAPOR DEPOSITION, METHOD FOR PRODUCING THIN FILM CONTAINING TIN, AND METHOD FOR PRODUCING TIN OXIDE THIN FILM
Document Type and Number:
WIPO Patent Application WO/2021/029215
Kind Code:
A1
Abstract:
The present invention provides: a bis(alkylcyclopentadienyl) tin or bis(alkyltetramethylcyclopentadienyl) tin having a high vapor pressure at a low temperature, such as bis(ethylcyclopentadienyl) tin; raw materials for chemical vapor deposition, which contain these organic tin compounds as primary components; and a method for producing a thin film containing tin by means of atomic layer deposition using the raw materials for chemical vapor deposition. These raw materials for chemical vapor deposition contain a bis(alkylcyclopentadienyl) tin or bis(alkyltetramethylcyclopentadienyl) tin represented by formula (1) as a primary component. (In formula (1), R1 and R2 each independently denote a hydrogen atom or an alkyl group having 6 or fewer carbon atoms, and R3 and R4 each independently denote an alkyl group having 6 or fewer carbon atoms.)

Inventors:
TAKAHASHI NOBUTAKA (JP)
MIZUTANI FUMIKAZU (JP)
HIGASHI SHINTARO (JP)
Application Number:
PCT/JP2020/028806
Publication Date:
February 18, 2021
Filing Date:
July 28, 2020
Export Citation:
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Assignee:
KOJUNDO CHEMICAL LABORATORY CO LTD (JP)
International Classes:
C07F17/00; C23C16/18; C23C16/40; H01L21/28; H01L21/285; C07F7/22
Domestic Patent References:
WO2012132669A12012-10-04
Foreign References:
JPS62182279A1987-08-10
JP2013108178A2013-06-06
JP2008091215A2008-04-17
Attorney, Agent or Firm:
KINOSHITA Shigeru (JP)
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