Title:
BULK ACOUSTIC WAVE RESONATOR WITH PIEZOELECTRIC LAYER HAVING INSERT STRUCTURE, AND FILTER AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/042741
Kind Code:
A1
Abstract:
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer; the region where the acoustic mirror, bottom electrode, piezoelectric layer, and top electrode overlap in the direction of the thickness of the substrate is the effective region of the resonator; the piezoelectric layer is provided with a composite insertion structure arranged along the edge of the effective region; the composite insertion structure comprises a first insertion layer and a second insertion layer; in the top-down view of the resonator at least a part of the first insertion layer overlaps the effective region, and in the top-down view of the resonator the first insertion layer and the second insertion layer at least partially overlap; the first insertion layer is a metal material and the second insertion layer is air or a dielectric material, or the first insertion layer is a dielectric material and the second insertion layer is air. The invention also relates to a filter and an electronic device.
Inventors:
YANG QINGRUI (CN)
PANG WEI (CN)
ZHANG MENGLUN (CN)
PANG WEI (CN)
ZHANG MENGLUN (CN)
Application Number:
PCT/CN2020/086562
Publication Date:
March 11, 2021
Filing Date:
April 24, 2020
Export Citation:
Assignee:
UNIV TIANJIN (CN)
ROFS MICROSYSTEM TIANJIN CO LTD (CN)
ROFS MICROSYSTEM TIANJIN CO LTD (CN)
International Classes:
H03H3/02; H03H9/02; H03H9/17; H03H9/54
Foreign References:
| CN111010104A | 2020-04-14 | |||
| CN109831175A | 2019-05-31 | |||
| US20160118957A1 | 2016-04-28 | |||
| US20110227671A1 | 2011-09-22 | |||
| US20170310303A1 | 2017-10-26 |
Other References:
See also references of EP 4027517A4
Attorney, Agent or Firm:
BEIJING JINCHENG TONGDA & NEAL LAW FIRM (CN)
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