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Title:
CAPACITOR, CAPACITOR STRUCTURE, AND METHOD FOR FABRICATING CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2021/196016
Kind Code:
A1
Abstract:
A capacitor, a capacitor structure, and a method for fabricating the capacitor, which is able to prepare a capacitor that has a small volume and a high capacitance value density. The capacitor comprises: a laminated structure (120), comprising at least one dielectric layer (23) and multiple conductive layers (21/22), wherein the at least one dielectric layer (23) and the multiple conductive layers (21/22) form a structure in which the conductive layers and dielectric layers alternate with each other; at least one first external electrode (130) and at least one second external electrode (140), which are located above the laminated structure (120); and at least one third external electrode (150) and at least one fourth external electrode (160), which are located below the laminated structure (120), wherein the first external electrode (130) and the third external electrode (150) are electrically connected to part or all of odd-numbered conductive layers among the multiple conductive layers, and the second external electrode (140) and the fourth external electrode (160) are electrically connected to part or all of even-numbered conductive layers among the multiple conductive layers.

Inventors:
LU BIN (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2020/082571
Publication Date:
October 07, 2021
Filing Date:
March 31, 2020
Export Citation:
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Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L23/64; H01L23/522; H01L27/24
Foreign References:
CN110785840A2020-02-11
CN110504284A2019-11-26
CN104393046A2015-03-04
CN1090090A1994-07-27
US20110260231A12011-10-27
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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