Title:
CELL CURRENT MEASUREMENT FOR THREE-DIMENSIONAL MEMORY
Document Type and Number:
WIPO Patent Application WO/2021/072577
Kind Code:
A1
Abstract:
A method for measuring memory cell current of a three-dimensional memory includes applying a first test voltage to a source line pad of a peripheral circuitry of the 3D memory device, wherein the source line pad is electrically connected to a common source line of a 3D memory array of the 3D memory device, and the peripheral circuitry formed on a first substrate and the 3D memory array formed a second substrate are electrically connected through direct bonding. The method also includes applying a second test voltage to a bit line pad of the 3D memory array, wherein the bit line pad and the 3D memory array are formed on opposite sides of the second substrate. In some embodiments, the method includes applying a second test voltage to a power source pad, wherein the power source pad is electrically connected to a page buffer of the peripheral circuitry.
Inventors:
OH JINYONG (CN)
KIM YOUN CHEUL (CN)
MUI MAN LUNG (CN)
KIM YOUN CHEUL (CN)
MUI MAN LUNG (CN)
Application Number:
PCT/CN2019/110955
Publication Date:
April 22, 2021
Filing Date:
October 14, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G01R19/00
Foreign References:
| CN110088899A | 2019-08-02 | |||
| CN106469729A | 2017-03-01 | |||
| CN101681678A | 2010-03-24 | |||
| US9715924B2 | 2017-07-25 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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