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Title:
CHEMICAL MECHANICAL POLISHING COMPOSITION, AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/026813
Kind Code:
A1
Abstract:
Provided is a chemical mechanical polishing composition capable of chemically mechanically polishing a ruthenium- or molybdenum-containing semiconductor substrate while maintaining a stable polishing rate and suppressing the corrosion of ruthenium or molybdenum. This chemical mechanical polishing composition contains an abrasive grain (A) and a compound (D) having at least one functional group selected from the group consisting of an amino group and salts thereof and at least one functional group selected from the group consisting of a carboxy group and salts thereof, wherein the abrasive grain (A) has at least one of functional groups represented by general formulae (1) to (4) below. (1): -SO3 -M+ (2): -COO-M+ (3): -NR1R2 (4): -N+R1R2R3M-

Inventors:
ISHIMAKI KOKI (JP)
AKAGI SOICHIRO (JP)
TAI YUGO (JP)
KUBOTA KIYONOBU (JP)
SUHARA RYO (JP)
YAMAGUCHI MISATO (JP)
Application Number:
PCT/JP2022/029923
Publication Date:
March 02, 2023
Filing Date:
August 04, 2022
Export Citation:
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Assignee:
JSR CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Foreign References:
JP2016069522A2016-05-09
JP2020096190A2020-06-18
JP2006269910A2006-10-05
JP2020025066A2020-02-13
JP2020178083A2020-10-29
JP2016030831A2016-03-07
JP2020035895A2020-03-05
JP2021019113A2021-02-15
JP2008546214A2008-12-18
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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