Title:
CHEMICAL-RESISTANT PROTECTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2021/200769
Kind Code:
A1
Abstract:
Provided are a protective film-forming composition excelling in preservation stability and having a favorable masking (protection) function against wet etching solutions when processing a semiconductor substrate, a protective film manufactured by using said composition, a substrate with a resist pattern, and a method for manufacturing a semiconductor device. The protective film-forming composition provides protection against wet etching solutions for semiconductors and contains: a polymer having a unit structure represented by the formula (1-1) (in formula (1-1): Ar represents a benzene ring, a naphthalene ring, or an anthracene ring; R1 represents a hydroxy group, a mercapto group that may be protected by a methyl group, an amino group that may be protected by a methyl group, a halogen group, or an alkyl group that has 1-10 carbons and that may be substituted or interrupted by a heteroatom and may be substituted by a hydroxyl group; n1 represents an integer from 0-3; n2 represents 1 or 2; L1 represents a single bond or an alkylene group that has 1-10 carbons; E represents an epoxy group; when n2 = 1, T1 represents an alkylene group that has 1-10 carbons and may be interrupted by a single bond, an ether bond, an ester bond, or an amide bond; and when n2 = 2, T1 represents a nitrogen atom or an amide bond); a thermal polymerization initiator; and a solvent.
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Inventors:
HASHIMOTO YUTO (JP)
NISHITA TOKIO (JP)
ENDO YUKI (JP)
NISHITA TOKIO (JP)
ENDO YUKI (JP)
Application Number:
PCT/JP2021/013164
Publication Date:
October 07, 2021
Filing Date:
March 29, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
G03F7/11; H01L21/027; H01L21/306
Domestic Patent References:
| WO2018203464A1 | 2018-11-08 |
Foreign References:
| JP2008039811A | 2008-02-21 | |||
| JP2008026600A | 2008-02-07 | |||
| JP2009098639A | 2009-05-07 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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