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Patent Searching and Data


Title:
CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH IMPROVED DISHING AND PATTERN SELECTIVITY
Document Type and Number:
WIPO Patent Application WO/2018/075409
Kind Code:
A3
Abstract:
The invention provides a chemical-mechanical polishing composition containing abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula (I) wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Inventors:
PALLIKKARA KUTTIATOOR SUDEEP (US)
HAMILTON CHARLES (US)
DOCKERY KEVIN (US)
Application Number:
PCT/US2017/056809
Publication Date:
June 28, 2018
Filing Date:
October 16, 2017
Export Citation:
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Assignee:
CABOT MICROELECTRONICS CORP (US)
International Classes:
C09G1/02; B24B37/00; C09K3/14
Foreign References:
US20150102012A12015-04-16
US20140346140A12014-11-27
US6520840B12003-02-18
EP1736534A12006-12-27
US20120264304A12012-10-18
Other References:
See also references of EP 3526298A4
Attorney, Agent or Firm:
OMHOLT, Thomas (US)
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