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Patent Searching and Data


Title:
COMPENSATION FOR SUBSTRATE DOPING IN EDGE RECONSTRUCTION FOR IN-SITU ELECTROMAGNETIC INDUCTIVE MONITORING
Document Type and Number:
WIPO Patent Application WO/2020/067914
Kind Code:
A8
Abstract:
A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modified measured trace.

Inventors:
IVANOV DENIS ANATOLYEVICH (RU)
XU KUN (US)
GAGE DAVID MAXWELL (US)
LEE HARRY Q (US)
IRAVANI HASSAN G (US)
BENNETT DOYLE E (US)
SHRESTHA KIRAN LALL (US)
Application Number:
PCT/RU2018/000625
Publication Date:
August 27, 2020
Filing Date:
September 26, 2018
Export Citation:
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Assignee:
APPLIED MATERIALS INC (US)
International Classes:
H01L21/66; B24B1/00; H01L21/30; H01L21/321
Attorney, Agent or Firm:
LAW FIRM "GORODISSKY AND PARTNERS" LTD. (RU)
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