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Title:
COMPOSITE SINTERED BODY, COMPONENT OF SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR MANUFACTURING COMPOSITE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2019/163710
Kind Code:
A1
Abstract:
A method for manufacturing a composite sintered body, said method comprising: a step for molding a powder mixture, which is prepared by mixing Al2O3, SiC and MgO, into a molded article in a preset shape (step S11); and a step for sintering the molded article to give a composite sintered body (step S12). In step S11, the ratio of SiC is 4.0-13.0 wt% inclusive relative to the powder mixture. In step S11, the purity of Al2O3 is 99.9% or higher. Thus, the growth of abnormal Al2O3 grains can be prevented and, at the same time, a composite sintered body having a high relative dielectric constant, a high withstand voltage and a low tanδ can be appropriately manufactured.

Inventors:
NAGAI ASUMI (JP)
INOUE KATSUHIRO (JP)
KATSUDA YUJI (JP)
Application Number:
PCT/JP2019/005853
Publication Date:
August 29, 2019
Filing Date:
February 18, 2019
Export Citation:
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Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C04B35/117; B25B11/00; H01B3/12; H01L21/683
Foreign References:
JP2006193353A2006-07-27
JP2001287982A2001-10-16
JP2000034174A2000-02-02
Attorney, Agent or Firm:
MATSUSAKA, Masahiro et al. (JP)
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