Title:
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/111863
Kind Code:
A1
Abstract:
The present invention provides: a composition for chemical mechanical polishing, said composition increasing the polishing rate ratio of a silicon nitride film to a silicon oxide film, while reducing the occurrence of dishing in the silicon nitride film; and a chemical mechanical polishing method. A composition for chemical mechanical polishing according to the present invention contains (A) silica abrasive grains having a functional group represented by general formula (1), and (B) a liquid medium; and the silica abrasive grains (A) satisfy the conditions (a) and (b) described below. (a) The zeta potential thereof in the composition for chemical mechanical polishing is less than -10 mV. (b) The silica abrasive grains are chained spherical grains, in each of which three or more particles are connected. (1): -SO3
-M+ (In the formula, M+ represents a monovalent positive ion.)
Inventors:
YAMADA YUUYA (JP)
OKAMOTO MASASHI (JP)
YOSHIO KOUHEI (JP)
SUGIE NORIHIKO (JP)
OKAMOTO MASASHI (JP)
YOSHIO KOUHEI (JP)
SUGIE NORIHIKO (JP)
Application Number:
PCT/JP2020/042769
Publication Date:
June 10, 2021
Filing Date:
November 17, 2020
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C09G1/02; B24B37/00; C09K3/14; H01L21/304
Domestic Patent References:
| WO2011093153A1 | 2011-08-04 | |||
| WO2019181399A1 | 2019-09-26 | |||
| WO2019131874A1 | 2019-07-04 | |||
| WO2016067923A1 | 2016-05-06 |
Foreign References:
| JP2011020208A | 2011-02-03 | |||
| JP2003133267A | 2003-05-09 | |||
| JP2017524767A | 2017-08-31 | |||
| JP2013041992A | 2013-02-28 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
Download PDF: