Title:
COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/026779
Kind Code:
A1
Abstract:
The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium, while maintaining a stable polishing rate and suppressing corrosion of ruthenium. A composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains, (B) an acid containing at least one kind of anion that is selected from the group consisting of a periodate ion (IO4
-), a hypochlorite ion (ClO-), a chlorite ion (ClO2
-) and a hypobromite ion (BrO-), or a salt thereof, and a liquid medium; if MA (% by mass) is the content of the abrasive grains (A) and MB (% by mass) is the content of the acid or a salt thereof (B), MA/MB is 0.2 to 50; and the absolute value of the zeta potential of the abrasive grains (A) in this composition for chemical mechanical polishing is 10 mV or more.
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Inventors:
ISHIMAKI KOKI (JP)
NAKAMURA SHUHEI (JP)
KAMEI YASUTAKA (JP)
NISHIMURA KOHEI (JP)
NAKAMURA SHUHEI (JP)
KAMEI YASUTAKA (JP)
NISHIMURA KOHEI (JP)
Application Number:
PCT/JP2022/029477
Publication Date:
March 02, 2023
Filing Date:
August 01, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2013137192A1 | 2013-09-19 |
Foreign References:
| JP2020010029A | 2020-01-16 | |||
| JP2020096190A | 2020-06-18 | |||
| JP2016032109A | 2016-03-07 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
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