Title:
COMPOSITION FOR FORMING EUV RESIST UNDERLAYER FILM
Document Type and Number:
WIPO Patent Application WO/2021/153698
Kind Code:
A1
Abstract:
Provided are a composition for forming a resist underlayer film that enables the formation of a desired resist pattern, a method for manufacturing a resist pattern using the composition for forming a resist underlayer film and a method for manufacturing a semiconductor device. This composition for forming an EUV resist underlayer film comprises a polymer that contains a structure represented by formula (1) at an end [in formula (1): X1 represents -O-, -S-, an ester bond or an amide bond; R1 represents an optionally halogenated alkyl group having 1-20 carbon atoms; and * represents a binding portion to the polymer end] and an organic solvent.
Inventors:
SHIMIZU SHOU (JP)
WAKAYAMA HIROYUKI (JP)
MIZUOCHI RYUTA (JP)
TAMURA MAMORU (JP)
WAKAYAMA HIROYUKI (JP)
MIZUOCHI RYUTA (JP)
TAMURA MAMORU (JP)
Application Number:
PCT/JP2021/003122
Publication Date:
August 05, 2021
Filing Date:
January 29, 2021
Export Citation:
Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C08F20/28; G03F7/11; H01L21/027
Domestic Patent References:
| WO2016208300A1 | 2016-12-29 | |||
| WO2015046149A1 | 2015-04-02 |
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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