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Patent Searching and Data


Title:
COMPOSITION FOR FORMING PROTECTIVE FILM CONTAINING DIOL STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2021/251481
Kind Code:
A1
Abstract:
Provided is a composition for protective film formation which can form a flat film that satisfactorily functions as a mask (protection) against wet etchants during semiconductor substrate processing and that has a low dry etching rate, the composition having satisfactory covering properties and recess-filling properties when applied to rugged substrates and having a small thickness difference after the recess filling. Also provided are: a protective film, a resist underlayer film, and a resist-pattern-coated substrate each produced using the composition; and a method for producing a semiconductor device. The composition, which is for forming films for protection against wet etchants for semiconductors, comprises an organic solvent and a compound that has a molecular end having a structure including at least one pair of adjoining hydroxyl groups and has a molecular weight of 1,500 or less, wherein particles present therein have an average particle diameter, as determined by a dynamic light scattering method, of 3 nm or smaller.

Inventors:
NISHITA TOKIO (JP)
HASHIMOTO YUTO (JP)
ENDO YUKI (JP)
Application Number:
PCT/JP2021/022277
Publication Date:
December 16, 2021
Filing Date:
June 11, 2021
Export Citation:
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Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C07C323/12; G03F7/11; G03F7/20; H01L21/312
Domestic Patent References:
WO2019138823A12019-07-18
WO2019012716A12019-01-17
Attorney, Agent or Firm:
TSUKUNI & ASSOCIATES et al. (JP)
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