Title:
COMPOSITION FOR LITHOGRAPHY AND PATTERN-FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2021/157551
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a composition or the like which is for lithography and from which it is possible to obtain an underlying film and a film in contact with a resist layer, capable of forming a pattern with excellent exposure sensitivity. Said purpose is achieved by a composition for lithography containing a compound having one or more elements selected from the group consisting of iodine, tellurium, and fluorine, or containing a resin having a constituent unit derived from said compound. The total mass of said atoms in the compound is 15-75 mass%.
Inventors:
OMATSU TADASHI (JP)
MATSUMOTO MASAHIRO (JP)
SATO TAKASHI (JP)
ECHIGO MASATOSHI (JP)
MATSUMOTO MASAHIRO (JP)
SATO TAKASHI (JP)
ECHIGO MASATOSHI (JP)
Application Number:
PCT/JP2021/003658
Publication Date:
August 12, 2021
Filing Date:
February 02, 2021
Export Citation:
Assignee:
MITSUBISHI GAS CHEMICAL CO (JP)
International Classes:
C07C39/15; C07C39/367; C07C39/38; C07D207/20; C07D311/80; C07D311/82; C08F12/16; C08F212/14; C08G61/00; G03F7/038; G03F7/039; G03F7/11; G03F7/20; G03F7/26
Domestic Patent References:
WO2017043561A1 | 2017-03-16 |
Foreign References:
JP2019061217A | 2019-04-18 | |||
JP2018172640A | 2018-11-08 | |||
JP2019101417A | 2019-06-24 | |||
JP2015161823A | 2015-09-07 |
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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