Title:
COMPOSITION AND METHOD OF USE THEREOF
Document Type and Number:
WIPO Patent Application WO2004108769
Kind Code:
A3
Abstract:
A photoresist composition comprises polymer resin that does not absorb 1-450 nm wavelength energy and photoacid generator that absorbs 1-450 nm wavelength energy. The composition has a ratio of two dissolution rates of greater than 1.1, and the first dissolution rate is measured prior to exposure of composition to 1-450 nm energy and second dissolution rate is measured after composition is exposed to 1-450 nm energy without post thermal exposure.
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Inventors:
HENDERSON CLIFFORD L (US)
HOSKINS TREVOR (US)
BERGER CODY M (US)
HOSKINS TREVOR (US)
BERGER CODY M (US)
Application Number:
PCT/US2004/017865
Publication Date:
October 19, 2006
Filing Date:
June 07, 2004
Export Citation:
Assignee:
GEORGIA TECH RES INST (US)
HENDERSON CLIFFORD L (US)
HOSKINS TREVOR (US)
BERGER CODY M (US)
HENDERSON CLIFFORD L (US)
HOSKINS TREVOR (US)
BERGER CODY M (US)
International Classes:
G03F7/30; G03C1/76; G03F7/004; G03F7/039; C08F
Other References:
JABLONSKI ET AL.: "Near edge x-ray absorption fine structure measurements of surface segregation in 157 mm photoresist blends", J. VAC. SCI. TECHNOLO. AMERICAN VACUUM SOCIETY, vol. B21, no. 6, November 2003 (2003-11-01) - December 2003 (2003-12-01), pages 3162 - 3165
CHAMBERS ET AL.: "Design of Dissolution Inhibitors for Chemically Amplified Photolithographic Systems, Advances in Resist Technology and Processing XXI", PROCEEDINGS OF SPIE FROM CONFERENCE IN SANTA CLARA, CA, USA, vol. 5376, 23 February 2004 (2004-02-23), pages 360 - 366
CHAMBERS ET AL.: "Dissolution Inhibitors for 157 nm Photolithography, Advances in Resist Technology and Processing XX", PROCEEDINGS OF SPIE FROM CONFERENCE IN SANTA CLARA, CA, USA, vol. 5039, February 2003 (2003-02-01), pages 93 - 102
CHAMBERS ET AL.: "Design of Dissolution Inhibitors for Chemically Amplified Photolithographic Systems, Advances in Resist Technology and Processing XXI", PROCEEDINGS OF SPIE FROM CONFERENCE IN SANTA CLARA, CA, USA, vol. 5376, 23 February 2004 (2004-02-23), pages 360 - 366
CHAMBERS ET AL.: "Dissolution Inhibitors for 157 nm Photolithography, Advances in Resist Technology and Processing XX", PROCEEDINGS OF SPIE FROM CONFERENCE IN SANTA CLARA, CA, USA, vol. 5039, February 2003 (2003-02-01), pages 93 - 102
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