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Title:
COMPOSITION FOR POLISHING SEMICONDUCTOR WIRING
Document Type and Number:
WIPO Patent Application WO/2020/196162
Kind Code:
A1
Abstract:
The present invention provides a composition for polishing semiconductor wiring, the composition having exceptional polishing speed and being such that the occurrence of dishing is suppressed. This composition for polishing semiconductor wiring includes a compound represented by formula (1). Formula (1): R1O-(C3H6O2)n-H (In the formula, R1 represents a hydrogen atom, a C1-24 hydrocarbon group that optionally has a hydroxyl group, or R2CO, and R2 represents a C1-24 hydrocarbon group. n represents the average degree of polymerization of glycerol units indicated in parentheses, and is 2-60.)

Inventors:
SAKANISHI YUICHI (JP)
Application Number:
PCT/JP2020/011996
Publication Date:
October 01, 2020
Filing Date:
March 18, 2020
Export Citation:
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Assignee:
DAICEL CORP (JP)
International Classes:
B24B37/00; H01L21/304
Domestic Patent References:
WO2013125445A12013-08-29
Foreign References:
JP2015205348A2015-11-19
Attorney, Agent or Firm:
GOTO & CO. (JP)
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