COMPOSITION FOR POLISHING FOR USE IN ELIMINATING PROTRUSION IN PERIPHERY OF LASER MARK

Title:

COMPOSITION FOR POLISHING FOR USE IN ELIMINATING PROTRUSION IN PERIPHERY OF LASER MARK

Document Type and Number:

WIPO Patent Application WO/2019/124442

Kind Code:

A1

Abstract:

[Problem] To provide a composition for polishing that eliminates a protrusion in the periphery of a laser mark in a wafer polishing process, and a polishing method in which the same is used. [Solution] A composition for polishing for eliminating a protrusion in the periphery of a laser mark on a wafer to which the laser mark has been added, wherein: the composition for polishing includes a water-soluble compound, a chelating agent, and metal oxide particles and has a pH of 7-12; the water-soluble compound has a hydrophobic portion and a hydrophilic portion; the hydrophilic portion has, at a terminal or side chain thereof, a hydroxyl group, a hydroxyethyl group, an acyloxy group, a carboxylate group, a carboxylate salt group, a sulfonate group, or a sulfonate salt group; and the water-soluble compound accounts for 5-700 ppm in the content of the composition for polishing. The metal oxide particles are silica particles, zirconia particles, or ceria particles that have an average primary particle diameter of 5-100 nm in a colloidal sol. A wafer polishing method for polishing a protrusion in the periphery of the laser mark.

Inventors:

ISHIMIZU EIICHIRO (JP)
TANATSUGU YUSUKE (JP)

Application Number:

PCT/JP2018/046797

Publication Date:

June 27, 2019

Filing Date:

December 19, 2018

Export Citation:

Click for automatic bibliography generation Help

Assignee:

NISSAN CHEMICAL CORP (JP)

International Classes:

H01L21/304; B24B37/00; C09K3/14

Domestic Patent References:

WO2015019706A1	2015-02-12
WO2017110315A1	2017-06-29

Foreign References:

JP2013165173A	2013-08-22
JP2015233031A	2015-12-24
JP6068647B2	2017-01-25
JP2017183359A	2017-10-05

Other References: