Title:
COMPOSITION FOR TREATING SEMICONDUCTOR AND TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2019/026478
Kind Code:
A1
Abstract:
Provided are: a composition for treating a semiconductor, the composition being capable of suppressing damage by corrosion on tungsten-containing wires or the like of an object to be treated and efficiently removing contamination from the surface of the object to be treated; and a treatment method using the composition. The treatment method according to the present invention comprises a step for chemically-mechanically polishing a wiring substrate containing tungsten as a wiring material, by using a composition containing an iron ion and a peroxide, and thereafter treating the wiring substrate with a composition for treating a semiconductor, wherein the composition for treating a semiconductor comprises a compound (A) having two or more groups selected from the group consisting of tertiary amino groups and salts thereof and a water-soluble compound (B) having a solubility parameter of 10 or higher, and has a pH of 2-7.
Inventors:
YOKOI KATSUTAKA (JP)
YAMAMOTO KEN-ICHI (JP)
MITSUBOSHI RAN (JP)
MASUDA KANAE (JP)
KAMO SATOSHI (JP)
SHINODA TOMOTAKA (JP)
YAMAMOTO KEN-ICHI (JP)
MITSUBOSHI RAN (JP)
MASUDA KANAE (JP)
KAMO SATOSHI (JP)
SHINODA TOMOTAKA (JP)
Application Number:
PCT/JP2018/024333
Publication Date:
February 07, 2019
Filing Date:
June 27, 2018
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
H01L21/304; B24B37/00; H01L21/306
Foreign References:
| JP2017516296A | 2017-06-15 | |||
| JP2005236280A | 2005-09-02 | |||
| US20170121561A1 | 2017-05-04 | |||
| JP2016098369A | 2016-05-30 |
Attorney, Agent or Firm:
OFUCHI, Michie et al. (JP)
Download PDF: