Title:
COMPOUND SEMICONDUCTOR AND METHOD FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2018/179567
Kind Code:
A1
Abstract:
[Problem] To provide: a Zn-doped InP single crystal substrate having a large diameter of 75 mm or larger, the Zn-doped InP single crystal substrate achieving a high electrical activation rate of Zn over the entire main surface of the substrate even in a highly-doped region in which the Zn concentration is 5 × 1018cm-3 or more; and a method for producing the same. [Solution] Even in a Zn-doped InP single crystal substrate having a diameter of 75 mm or larger and a Zn concentration of 5 × 1018cm-3 or more, the electrical activation rate of Zn is made larger than 85% over the entire main surface of the substrate by, while rotating an InP single crystal ingot at a rotation speed of 10 rpm or lower, cooling the InP single crystal ingot with a temperature difference of 200ºC for 2-7.5 minutes at least when the InP single crystal ingot is cooled, and cutting the InP single crystal ingot into thin plates.
Inventors:
NODA AKIRA (JP)
KAWAHIRA KEITA (JP)
HIRANO RYUICHI (JP)
KAWAHIRA KEITA (JP)
HIRANO RYUICHI (JP)
Application Number:
PCT/JP2017/040373
Publication Date:
October 04, 2018
Filing Date:
November 09, 2017
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C30B29/40; C30B15/00
Domestic Patent References:
WO2014156596A1 | 2014-10-02 | |||
WO2004106597A1 | 2004-12-09 | |||
WO2005106083A1 | 2005-11-10 |
Foreign References:
JPH04342498A | 1992-11-27 | |||
JP2015129091A | 2015-07-16 | |||
JP2002234792A | 2002-08-23 | |||
JPH02229796A | 1990-09-12 | |||
JPS6270298A | 1987-03-31 | |||
JP2008120614A | 2008-05-29 | |||
JP2000327496A | 2000-11-28 | |||
JP2002234792A | 2002-08-23 |
Other References:
R. HIRANO ET AL., J. APPL. PHYS., vol. 71, 1992, pages 659 - 663
R. HIRANOM. UCHIDA, J. ELECTRON. MATER, vol. 25, 1996, pages 347 - 351
See also references of EP 3591102A4
R. HIRANOM. UCHIDA, J. ELECTRON. MATER, vol. 25, 1996, pages 347 - 351
See also references of EP 3591102A4
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL et al. (JP)
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