Title:
CONDUCTIVE-BRIDGE MEMORY DEVICE, METHOD FOR MANUFACTURING SAME, AND SWITCH DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/039988
Kind Code:
A1
Abstract:
A conductive-bridge memory device comprises a memory cell that includes: a first metal layer 11; a second metal layer 12; a first insulation body layer 13 having a first surface 13a facing the first metal layer 11 and a second surface 13b facing the second metal layer 12, the second surface 13b being the surface opposite the first surface 13a, and the first insulation body layer 13 having a through hole that passes from the first surface 13a to the second surface 13b; and a liquid layer 14 comprising a liquid that includes a liquid electrolyte impregnated into the through hole 13h.
Inventors:
ITOH TOSHIYUKI (JP)
NOKAMI TOSHIKI (JP)
KINOSHITA KENTARO (JP)
SHIMA HISASHI (JP)
NAITOH YASUHISA (JP)
AKINAGA HIROYUKI (JP)
SATOU HIROSHI (JP)
MORII SHIGEKI (JP)
OTA KUSUO (JP)
TANAKA ATSUSHI (JP)
NOKAMI TOSHIKI (JP)
KINOSHITA KENTARO (JP)
SHIMA HISASHI (JP)
NAITOH YASUHISA (JP)
AKINAGA HIROYUKI (JP)
SATOU HIROSHI (JP)
MORII SHIGEKI (JP)
OTA KUSUO (JP)
TANAKA ATSUSHI (JP)
Application Number:
PCT/JP2020/032668
Publication Date:
March 04, 2021
Filing Date:
August 28, 2020
Export Citation:
Assignee:
NAT UNIV CORP TOTTORI UNIV (JP)
AIST (JP)
NAGASE & CO LTD (JP)
AIST (JP)
NAGASE & CO LTD (JP)
International Classes:
H01L45/00; H01L21/8239; H01L27/105; H01L49/00
Foreign References:
| JP2015046548A | 2015-03-12 | |||
| JP2009081444A | 2009-04-16 | |||
| JP2013030527A | 2013-02-07 | |||
| JP2008016115A | 2008-01-24 |
Attorney, Agent or Firm:
ASAHINA & CO. (JP)
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