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Title:
CONDUCTIVITY IMPROVEMENTS FOR III-V SEMICONDUCTOR DEVICES
Document Type and Number:
WIPO Patent Application WO/2011/087610
Kind Code:
A3
Abstract:
Conductivity improvements in III-V semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer. A second improvement includes an anneal of a metal/Si, Ge or SiliconGermanium/III-V stack to form a metal-Silicon, metal-Germanium or metal-SiliconGermanium layer over a Si and/or Germanium doped III-V layer. Then, removing the metal layer and forming a source/drain electrode on the metal-Silicon, metal-Germanium or metal-SiliconGermanium layer. A third improvement includes forming a layer of a Group IV and/or Group VI element over a III-V channel layer, and, annealing to dope the III-V channel layer with Group IV and/or Group VI species. A fourth improvement includes a passivation and/or dipole layer formed over an access region of a III-V device.

Inventors:
KAVALIEROS JACK T (US)
RACHMADY WILLY (US)
MUKHERJEE NILOY (US)
RADOSAVLJEVIC MARKO (US)
GOE NITI (US)
LEE YONG JU (US)
MAJHI PRASHANT (US)
TSAI WILMAN (US)
DEWEY GILBERT (US)
Application Number:
PCT/US2010/058784
Publication Date:
October 20, 2011
Filing Date:
December 02, 2010
Export Citation:
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Assignee:
INTEL CORP (US)
KAVALIEROS JACK T (US)
RACHMADY WILLY (US)
MUKHERJEE NILOY (US)
RADOSAVLJEVIC MARKO (US)
GOE NITI (US)
LEE YONG JU (US)
MAJHI PRASHANT (US)
TSAI WILMAN (US)
DEWEY GILBERT (US)
International Classes:
H01L29/778; H01L21/335
Foreign References:
US6281528B12001-08-28
JP2009054807A2009-03-12
US20020175343A12002-11-28
Other References:
See also references of EP 2517253A4
Attorney, Agent or Firm:
VINCENT, Lester, J. et al. (1279 Oakmead ParkwaySunnyvale, CA, US)
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