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Title:
CONTROL METHOD FOR RECOMBINATION LIFETIMES
Document Type and Number:
WIPO Patent Application WO/2019/131074
Kind Code:
A1
Abstract:
A control method for recombination lifetimes characterized: by controlling the carrier recombination lifetime in a silicon single crystal substrate by performing a preparation step of preparing a silicon single crystal substrate from a nitrogen-added silicon single crystal grown by the FZ method, a heating step A of performing heat application, a particle beam irradiation step of irradiating the silicon single crystal substrate with a particle beam, and a heating step B of heating the silicon single crystal substrate; and in that the nitrogen concentration Cn in the silicon single crystal substrate is adjusted by causing the nitrogen in the silicon single crystal substrate to diffuse outward in the heating step A depending on the oxygen concentration Co in the silicon single crystal substrate prepared in the preparation step, and subsequently, the particle beam irradiation step is performed. Thus, provided is a control method for recombination lifetimes which can ensure less variability in recombination lifetimes originating in nitrogen-added FZ silicon single crystal substrates, and can control recombination lifetimes with a high degree of accuracy.

Inventors:
TAKENO HIROSHI (JP)
Application Number:
PCT/JP2018/045201
Publication Date:
July 04, 2019
Filing Date:
December 10, 2018
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/322; C30B13/00; C30B29/06; H01L21/66; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
WO2013100155A12013-07-04
WO2007055352A12007-05-18
Foreign References:
JP2016127192A2016-07-11
JP2015198166A2015-11-09
JP2002110687A2002-04-12
JP2010003899A2010-01-07
JP2008103673A2008-05-01
JPH11135509A1999-05-21
JP2000200792A2000-07-18
JP2017122033A2017-07-13
JP2015198166A2015-11-09
JP2016127192A2016-07-11
Other References:
KIYOI ET AL., THE 61ST JAPAN SOCIETY OF APPLIED PHYSICS SPRING MEETING, MEETING PROCEEDINGS, pages 19,F9 - 14
MINATO ET AL., THE 4TH WORKSHOP ON POWER DEVICE SILICON AND RELATED SEMICONDUCTOR MATERIALS, pages 77
K. TAKANO ET AL., PROCEEDING OF THE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S, 2015, pages 129
SUGIYAMA ET AL., SILICON TECHNOLOGY, pages 11
N. INOUE ET AL., PHYSICA B, vol. 401-402, 2007, pages 477
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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