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Patent Searching and Data


Title:
COPPER METAL FILM, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING COPPER WIRING FOR SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2015/099452
Kind Code:
A1
Abstract:
The present invention relates to a copper metal film used as a seed layer for electrodeposition, in connection with formation of copper wiring for a semiconductor device, a method for manufacturing the same, and a method for forming copper wiring for a semiconductor device using the copper metal film.

Inventors:
LEE WON-JUN (KR)
PARK JAE-MIN (KR)
Application Number:
PCT/KR2014/012816
Publication Date:
July 02, 2015
Filing Date:
December 24, 2014
Export Citation:
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Assignee:
UP CHEMICAL CO LTD (KR)
International Classes:
C25D3/38; C25D5/48; C25D7/12
Foreign References:
KR20040076758A2004-09-03
KR20100025870A2010-03-10
KR20040003386A2004-01-13
KR20070051331A2007-05-17
Other References:
PARK, JAE MIN: "A) study on the atomic layer deposition of copper nitride film and its application to seed layer of copper interconnect", THESIS, GRADUATE SCHOOL OF SEJONG UNIVERSITY NANO NEW MATERIALS ENGINEERING, August 2013 (2013-08-01), pages 1 - 88
Attorney, Agent or Firm:
MAPS Intellectual Property Law Firm (KR)
특허법인 엠에이피에스 (KR)
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