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Patent Searching and Data


Title:
Cr-Si-C-BASED SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2022/025033
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a high density Cr-Si-C-based sintered body containing chromium (Cr), silicon (Si), and carbon (C), and to provide at least one of a further high density Cr-Si-C-based sintered body, a sputtering target containing same, and a method for manufacturing a film using said sputtering target. With the present invention, it is possible to provide a Cr-Si-C-based sintered body that contains chromium (Cr), silicon (Si), and carbon (C), and that is characterized by having a relative density of 90% or more and a pore percentage of 13% or less.

Inventors:
HARA HIROYUKI (JP)
MESUDA MASAMI (JP)
MASUDA AYAKA (JP)
Application Number:
PCT/JP2021/027671
Publication Date:
February 03, 2022
Filing Date:
July 27, 2021
Export Citation:
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Assignee:
TOSOH CORP (JP)
International Classes:
C04B35/58; C04B35/56; C23C14/06; C23C14/34
Domestic Patent References:
WO2020105591A12020-05-28
WO2014157054A12014-10-02
Foreign References:
JP2004325835A2004-11-18
JP2017218621A2017-12-14
JPH0786004A1995-03-31
JP2006313785A2006-11-16
JP2007019274A2007-01-25
Attorney, Agent or Firm:
T.S. PARTNERS et al. (JP)
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