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Patent Searching and Data


Title:
CRYSTAL PULLING PROCESS FOR SINGLE-CRYSTAL SILICON
Document Type and Number:
WIPO Patent Application WO/2022/148402
Kind Code:
A1
Abstract:
A crystal pulling process for single-crystal silicon doped with a volatile dopant. The crystal pulling process comprises using a low furnace pressure of no more than 18 Torr in a single-crystal furnace during an equal-diameter stage of crystal growth, and keeping the flow of argon gas introduced into the single-crystal furnace in a constant range, so as to achieve equal-diameter crystal pulling under a low furnace pressure. By means of the process, the axial resistivity attenuation slope of the single crystal doped with the volatile dopant, especially gallium, can be reduced, and the resistivity effective length thereof can be increased.

Inventors:
DENG HAO (CN)
XIE ZHIYAN (CN)
JIN QIAN (CN)
Application Number:
PCT/CN2022/070545
Publication Date:
July 14, 2022
Filing Date:
January 06, 2022
Export Citation:
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Assignee:
LONGI GREEN ENERGY TECH CO LTD (CN)
International Classes:
C30B29/06; C30B15/20
Foreign References:
CN112981520A2021-06-18
CN113652737A2021-11-16
CN104357901A2015-02-18
CN102162124A2011-08-24
JP2012206874A2012-10-25
Attorney, Agent or Firm:
BEIJING RUN ZEHENG INTELLECTUAL PROPERTY LAW FIRM (CN)
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