Title:
CURRENT MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/040154
Kind Code:
A1
Abstract:
A current memory device according to an embodiment of the present invention comprises: a first current mirror circuit which uses a plurality of N-type MOSs and which is formed as a cascode circuit; a second current mirror circuit which uses a plurality of P-type MOSs and which is formed as a cascode circuit; a dummy capacitor connected between the first current mirror circuit and the second current mirror circuit; and a switch circuit connected between a gate terminal and a drain terminal of at least one of the plurality of P-type MOSs.
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Inventors:
KIM SEONG KWEON (KR)
Application Number:
PCT/KR2019/018620
Publication Date:
March 04, 2021
Filing Date:
December 27, 2019
Export Citation:
Assignee:
SEOUL NATIONAL UNIV OF TECHNOLOGY CENTER FOR INDUSTRY COLLABORATION (KR)
International Classes:
G11C27/02; G06N3/063
Foreign References:
| US20180226134A1 | 2018-08-09 | |||
| US20130285733A1 | 2013-10-31 | |||
| US20110109670A1 | 2011-05-12 | |||
| KR100449353B1 | 2005-01-26 | |||
| KR20150022151A | 2015-03-04 |
Attorney, Agent or Firm:
C.M. PATENT & LAW FIRM, LLP. (KR)
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