Title:
DATA BUFFERING OPERATION OF THREE-DIMENSIONAL MEMORY DEVICE WITH STATIC RANDOM-ACCESS MEMORY
Document Type and Number:
WIPO Patent Application WO/2020/232574
Kind Code:
A1
Abstract:
Embodiments of three-dimensional (3D) memory devices with a 3D NAND memory array having a plurality of pages and an on-die data buffer coupled to the memory array on a same chip and configured to buffer a plurality of batches of program data between a host and the memory array. The on-die data buffer may include SRAM cells. The 3D memory device also includes a controller coupled to the on-die data buffer on the same chip. The controller may be configured to receive control instructions for performing a first pass program and a second pass program on memory cells in a page. The controller may also be configured to buffer, in the on-die data buffer, first program data for a first pass program and second program data for a second pass program from a host and retrieve the first program data from the on-die data buffer.
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Inventors:
LI YUEPING (CN)
WAN WEI JUN (CN)
HOU CHUN YUAN (CN)
WAN WEI JUN (CN)
HOU CHUN YUAN (CN)
Application Number:
PCT/CN2019/087406
Publication Date:
November 26, 2020
Filing Date:
May 17, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C11/412
Foreign References:
| US20170123724A1 | 2017-05-04 | |||
| CN106910746A | 2017-06-30 | |||
| US20050286308A1 | 2005-12-29 | |||
| US20150039809A1 | 2015-02-05 | |||
| US9824761B2 | 2017-11-21 |
Other References:
See also references of EP 3909049A4
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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