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Title:
DRAM MEMORY
Document Type and Number:
WIPO Patent Application WO/2021/056887
Kind Code:
A1
Abstract:
A DRAM memory, comprising: a substrate; a plurality of memory banks arranged in rows and columns on the substrate, wherein each memory bank is divided into three storage blocks in a column direction, and each storage block has a plurality of storage units arranged in rows and columns. By means of dividing each memory bank into three storage blocks in the column direction, where the capacity of each memory bank is rated, each memory bank is divided into three storage blocks in the column direction, and the length of each storage block in a row direction is reduced, so that distances from a control line and a data transmission line to the corresponding storage units in a storage array in each storage block are shortened; therefore a very large drive will not be required; furthermore, parasitic resistance and parasitic capacitance generated by the data transmission line are reduced; and the data transmission rate and the data transmission accuracy are improved, and the power consumption is reduced.

Inventors:
JI, Kangling (Haiheng Building No.6 Cuiwei Road, Economic And Technological Development Zon, Hefei Anhui 0, CN)
SHANG, Weibing (Haiheng Building No.6 Cuiwei Road, Economic And Technological Development Zon, Hefei Anhui 0, CN)
LI, Hongwen (Haiheng Building No.6 Cuiwei Road, Economic And Technological Development Zon, Hefei Anhui 0, CN)
Application Number:
CN2019/127862
Publication Date:
April 01, 2021
Filing Date:
December 24, 2019
Export Citation:
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Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC. (Haiheng Building No.6 Cuiwei Road, Economic And Technological Development Zon, Hefei Anhui 0, CN)
International Classes:
G11C11/403; G11C11/4063
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (12/F Enterprice Square 228 Meiyuan Road, Jingan District, Shanghai 0, CN)
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