DRY CLEANING DEVICE AND METHOD USING ATMOSPHERIC PRESSURE PLASMA AND STEAM

WIPO Patent Application WO/2020/040464

A1

The present invention relates to a dry cleaning device and method using atmospheric pressure plasma and steam. The device according to the present invention comprises: a chuck in which a silicon substrate having a silicon oxide and a silicon nitride formed therein is arranged; an RF electrode to which RF power for generating plasma is applied; a shower head spaced apart from the RF electrode with a plasma generation area therebetween; and a steam supply device for supplying high-temperature cleaning gas to the shower head, wherein reaction gas supplied to the plasma generation area is plasma-treated with the RF power so as to be supplied to the silicon substrate, and thus the silicon oxide and the silicon nitride are changed to a reaction layer including ammonium hexafluorosilicate ((NH4)2SiF6), and the high-temperature cleaning gas supplied by the steam supply device is sprayed onto the reaction layer through the shower head so as to remove the reaction layer. According to the present invention, the time required for removing a reaction layer during a dry cleaning process is shortened, and overall processing time can be reduced.

WO/2023/015270	WET CLEAN SPRAY PROCESS CHAMBER FOR SUBSTRATES
JPS62182692	XY STAGE

LEE GIL-GWANG (KR)
LIM DOO-HO (KR)
PARK JAE-YANG (KR)
OH SANG-RYONG (KR)

PCT/KR2019/010144

February 27, 2020

August 12, 2019

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MUJIN ELECTRONICS CO LTD (KR)

H01L21/67; H01J37/32; H01L21/02

KR20150109288A	2015-10-01
KR100794661B1	2008-01-14
JP2010225847A	2010-10-07
KR20100072736A	2010-07-01
KR20040031146A	2004-04-13
US20140295665A1	2014-10-02

DARAE LAW & IP, LLC (KR)

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