Title:
DRY ETCHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/079624
Kind Code:
A1
Abstract:
A dry etching method according to the embodiments of the present disclosure is characterized in that etching is performed without a plasma state by reacting β-diketone and nitrogen dioxide on a film to be etched, which is formed on a surface of a workpiece and includes a metal having an M-O binding energy of at least 5 eV or an oxide of the metal.
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Inventors:
YAMAUCHI KUNIHIRO (JP)
KITAYAMA HIKARU (JP)
YAO AKIFUMI (JP)
KITAYAMA HIKARU (JP)
YAO AKIFUMI (JP)
Application Number:
PCT/JP2020/033073
Publication Date:
April 29, 2021
Filing Date:
September 01, 2020
Export Citation:
Assignee:
CENTRAL GLASS CO LTD (JP)
International Classes:
H01L21/302
Domestic Patent References:
| WO2017134930A1 | 2017-08-10 |
Foreign References:
| JPH06151383A | 1994-05-31 | |||
| US20050107274A1 | 2005-05-19 | |||
| JP2018186149A | 2018-11-22 | |||
| JP2018110229A | 2018-07-12 | |||
| JP2004091829A | 2004-03-25 | |||
| JP2006310676A | 2006-11-09 | |||
| JP2013194307A | 2013-09-30 |
Other References:
See also references of EP 4047636A4
Attorney, Agent or Firm:
YASUTOMI & ASSOCIATES (JP)
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