Title:
DYNAMIC DANGEROUS BLOCK SCREENING METHOD FOR NAND FLASH
Document Type and Number:
WIPO Patent Application WO/2021/035803
Kind Code:
A1
Abstract:
A dynamic dangerous block screening method for an NAND Flash. All readable voltages are used for a page in a block that is subjected to ECC Fail under a default voltage, and whether there is a voltage capable of reducing an Error Bit of the page to below a threshold value is checked. If Error Bits read by using all the readable voltages are all greater than the threshold value T, this block is marked as a dangerous block, and if an Error Bit read by using one readable voltage is not greater than the threshold value T, this block is considered to be normal. A dangerous block that causes poor internal characteristics of an NAND Flash during the usage process can be screened. A user reads data from the screened dangerous block, places the data in a normal block, and avoids further using this dangerous block, thereby avoiding causing a series of problems of instability because the dangerous block is used next time, and improving the stability of a product.
Inventors:
ZHANG MING (CN)
WEI ZHIFAN (CN)
WANG ZHANNAN (CN)
ZENG RUIHUA (CN)
WEI ZHIFAN (CN)
WANG ZHANNAN (CN)
ZENG RUIHUA (CN)
Application Number:
PCT/CN2019/105122
Publication Date:
March 04, 2021
Filing Date:
September 10, 2019
Export Citation:
Assignee:
JIANGSU HUACUN ELECTRONIC TECH CO LTD (CN)
International Classes:
G11C29/42
Domestic Patent References:
| WO2013189212A1 | 2013-12-27 |
Foreign References:
| CN106776109A | 2017-05-31 | |||
| CN105630701A | 2016-06-01 | |||
| CN1937080A | 2007-03-28 | |||
| US7567472B2 | 2009-07-28 |
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