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Title:
END POINT DETECTION IN TIME DIVISION MULTIPLEXED ETCH PROCESSES
Document Type and Number:
WIPO Patent Application WO2004075255
Kind Code:
A3
Abstract:
An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

Inventors:
WESTERMAN RUSSELL
JOHNSON DAVID
Application Number:
PCT/US2004/003235
Publication Date:
November 04, 2004
Filing Date:
February 04, 2004
Export Citation:
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Assignee:
UNAXIS USA INC (US)
International Classes:
H01J37/32; H01L21/44; H01L; (IPC1-7): H01J37/32
Domestic Patent References:
WO2000067306A12000-11-09
WO2002029884A22002-04-11
Foreign References:
US4795529A1989-01-03
EP1009014A22000-06-14
US5208644A1993-05-04
US6200822B12001-03-13
US6238937B12001-05-29
Other References:
YUE H HENRY ET AL: "Plasma etching endpoint detection using multiple wavelengths for small open-area wafers", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 19, no. 1, January 2001 (2001-01-01), pages 66 - 75, XP012005470, ISSN: 0734-2101
WHITE D A ET AL: "LOW OPEN-AREA ENDPOINT DETECTION USING A PCA-BASED T2 STATISTIC ANDQ STATISTIC ON OPTICAL EMISSION SPECTROSCOPY MEASUREMENTS", IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, IEEE INC, NEW YORK, US, vol. 13, no. 2, May 2000 (2000-05-01), pages 193 - 207, XP000945968, ISSN: 0894-6507
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