Title:
EPITAXIAL SILICON CARBIDE WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/129867
Kind Code:
A1
Abstract:
The present invention provides a manufacturing method by which it is possible to obtain, when manufacturing an epitaxial SiC wafer by epitaxial growth of SiC on an SiC substrate, an epitaxial SiC wafer having a high-quality epitaxial film with even less comets and lamination defects than in the past. This epitaxial silicon carbide wafer manufacturing method is characterized in that the pre-growth atmosphere gas that flows into a growth furnace prior to the start of epitaxial growth contains hydrogen gas, with the remainder being an inactive gas and unavoidable impurities, and the hydrogen gas content is 0.1-10.0 vol% with respect to the inactive gas.
Inventors:
AIGO TAKASHI (JP)
ITO WATARU (JP)
FUJIMOTO TATSUO (JP)
ITO WATARU (JP)
FUJIMOTO TATSUO (JP)
Application Number:
PCT/JP2015/055893
Publication Date:
September 03, 2015
Filing Date:
February 27, 2015
Export Citation:
Assignee:
NIPPON STEEL & SUMITOMO METAL CORP (JP)
International Classes:
C30B29/36; C30B25/02
Foreign References:
| JP2005324994A | 2005-11-24 | |||
| JP2001077030A | 2001-03-23 | |||
| JP2006193384A | 2006-07-27 | |||
| JP2014058411A | 2014-04-03 |
Other References:
See also references of EP 3112504A4
Attorney, Agent or Firm:
AOKI, Atsushi et al. (JP)
Aoki 篤 (JP)
Aoki 篤 (JP)
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