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Title:
EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/006145
Kind Code:
A1
Abstract:
Provided is a method for manufacturing an epitaxial silicon wafer, the method including a preliminary heat treatment step in which a silicon wafer that has an oxygen concentration in a range of 9 × 1017 to 16 × 1017 atoms/cm3, does not have any dislocation clusters or COP, and has oxygen-precipitation suppression regions is subjected to a heat treatment for increasing the density of oxygen precipitates, and an epitaxial-layer formation step in which an epitaxial layer is formed on the surface of the silicon wafer after the preliminary heat treatment step. The manufacturing method further includes a heat-treatment-condition determination step in which the heat treatment conditions for the preliminary heat treatment step are determined on the basis of the fraction of the area occupied by the oxygen-precipitation suppression regions on the silicon wafer before conducting the preliminary heat treatment step. The manufacturing method makes it possible to manufacture an epitaxial silicon wafer having a low epitaxial-defect density and exhibiting superior gettering properties over the entire region along the diameter direction of the wafer.

Inventors:
FUJISE JUN (JP)
ONO TOSHIAKI (JP)
Application Number:
PCT/JP2015/002157
Publication Date:
January 14, 2016
Filing Date:
April 21, 2015
Export Citation:
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Assignee:
SUMCO CORP (JP)
International Classes:
H01L21/322; H01L21/20
Foreign References:
JP2011243923A2011-12-01
JP2010087512A2010-04-15
JP2001509319A2001-07-10
JP2010132509A2010-06-17
JP2006054350A2006-02-23
Attorney, Agent or Firm:
ASCEND IP LAW FIRM (JP)
アセンド patent business corporation (JP)
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