ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME

Title:

ETCHING COMPOSITION FOR METAL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING SAME

Document Type and Number:

WIPO Patent Application WO/2006/137497

Kind Code:

A1

Abstract:

Disclosed is an etching composition used for selectively etching a metal material in a method for manufacturing a semiconductor device which is composed of a high dielectric constant insulating material, an insulating material composed of a silicon oxide film or a silicon nitride film, and a metal material. This etching composition is characterized by being an aqueous solution containing a fluorine compound and a chelating agent having an oxoacid of phosphorus in the molecular structure as a functional group, or an aqueous solution containing a fluorine compound, a chelating agent having an oxoacid of phosphorus in the molecular structure as a functional group, and an inorganic acid and/or an organic acid. Also disclosed is a method for manufacturing a semiconductor device by using such an etching composition. This etching composition enables to etch a metal material selectively and effectively.

Inventors:

YAGUCHI KAZUYOSHI (JP)
ABE KOJIRO (JP)
OHTO MASARU (JP)

Application Number:

PCT/JP2006/312545

Publication Date:

December 28, 2006

Filing Date:

June 22, 2006

Export Citation:

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Assignee:

MITSUBISHI GAS CHEMICAL CO (JP)
YAGUCHI KAZUYOSHI (JP)
ABE KOJIRO (JP)
OHTO MASARU (JP)

International Classes:

H01L21/308; C23F1/16; H01L21/28; H01L29/78

Foreign References:

JP2002155382A	2002-05-31
JP2004068068A	2004-03-04
JP2002016053A	2002-01-18
JP2002528903A	2002-09-03
JP2001093875A	2001-04-06
JP2003174021A	2003-06-20
JP2004296593A	2004-10-21

Other References: