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Patent Searching and Data


Title:
ETCHING METHOD AND ETCHING PROCESSING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/035283
Kind Code:
A1
Abstract:
Provided is an etching method including: inputting values of at least electric power, pressure and gas flow rate to a setting unit; performing etching processing in a chamber according to the values input to the setting unit; and calculating an ion energy distribution function by using the measurement values in the etching processing.

Inventors:
FUKASAWA MASANAGA (JP)
Application Number:
PCT/JP2018/025193
Publication Date:
February 21, 2019
Filing Date:
July 03, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L21/3065; H05H1/00; H05H1/46
Foreign References:
JP2010232594A2010-10-14
JPH07297173A1995-11-10
JP2015213020A2015-11-26
JPH1074481A1998-03-17
JP2006269268A2006-10-05
JP2003507880A2003-02-25
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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