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Patent Searching and Data


Title:
FERROELECTRIC MEMORY AND STORAGE DATA READING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/120910
Kind Code:
A1
Abstract:
A ferroelectric memory and a storage data reading method thereof. The ferroelectric memory comprises a plurality of word lines and a plurality of plate lines extending in a first direction, a plurality of bit lines extending in a second direction, and a plurality of ferroelectric storage units located between the word lines, the plate lines, and the bit lines; each ferroelectric storage unit comprises a first transistor and a first capacitor; a gate of the first transistor is connected to a word line; a drain of the first transistor is connected to a bit line, and a source of the first transistor is connected to a first end of the first capacitor; a second end of the first capacitor is connected to a plate line. When data stored in the first capacitor is read, a current output from the first capacitor is amplified and then output to the bit line, thereby improving the sensing margin and reading robustness. Moreover, because the ferroelectric memory only comprises one capacitor and one transistor, a smaller area and lower cost are achieved.

Inventors:
KONG FANSHENG (CN)
ZHOU HUA (CN)
Application Number:
PCT/CN2020/136888
Publication Date:
June 16, 2022
Filing Date:
December 16, 2020
Export Citation:
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Assignee:
GUANGHUA LINGANG ENGINEERING APPLICATION AND TECH R&D SHANGHAI CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
US5400275A1995-03-21
CN1734664A2006-02-15
CN1734663A2006-02-15
CN1385858A2002-12-18
CN1203424A1998-12-30
CN101266832A2008-09-17
US6535430B22003-03-18
Attorney, Agent or Firm:
P. C. & ASSOCIATES (CN)
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