Title:
FERROELECTRIC MEMORY AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/160292
Kind Code:
A1
Abstract:
Provided are a ferroelectric memory and a storage device, which are used for reducing an operating voltage, reducing interface defects in a ferroelectric memory, and improving the durability of the ferroelectric memory. The ferroelectric memory comprises at least one memory cell, and each of the memory cells comprises a transistor, a first ferroelectric capacitor and at least one voltage-dividing capacitor, wherein the transistor comprises a gate electrode, a source electrode and a drain electrode; one electrode of the first ferroelectric capacitor is connected to the gate electrode, and the other electrode of the first ferroelectric capacitor is configured to be connected to a word line; and one electrode of each of the at least one voltage-dividing capacitor is connected to the gate electrode, and the other electrode of each of the at least one voltage-dividing capacitor is connected to the source electrode.
Inventors:
HOU ZHAOZHAO (CN)
BU SITONG (CN)
FANG YICHEN (CN)
ZHANG YU (CN)
XU JEFFREY JUNHAO (CN)
BU SITONG (CN)
FANG YICHEN (CN)
ZHANG YU (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2021/074505
Publication Date:
August 04, 2022
Filing Date:
January 29, 2021
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
CN112018185A | 2020-12-01 | |||
CN111696603A | 2020-09-22 | |||
CN101960531A | 2011-01-26 | |||
CN1409322A | 2003-04-09 |
Other References:
See also references of EP 4266312A4
Attorney, Agent or Firm:
SHENZHEN SCIENBIZIP INTELLECTUAL PROPERTY AGENCY CO.,LTD. (CN)
Download PDF:
Previous Patent: BATTERY PACK, ELECTRIC DEVICE, AND MANUFACTURING METHOD
Next Patent: TAG POSITIONING METHOD AND DEVICE
Next Patent: TAG POSITIONING METHOD AND DEVICE