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Patent Searching and Data


Title:
FERROELECTRIC MEMORY AND STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/160292
Kind Code:
A1
Abstract:
Provided are a ferroelectric memory and a storage device, which are used for reducing an operating voltage, reducing interface defects in a ferroelectric memory, and improving the durability of the ferroelectric memory. The ferroelectric memory comprises at least one memory cell, and each of the memory cells comprises a transistor, a first ferroelectric capacitor and at least one voltage-dividing capacitor, wherein the transistor comprises a gate electrode, a source electrode and a drain electrode; one electrode of the first ferroelectric capacitor is connected to the gate electrode, and the other electrode of the first ferroelectric capacitor is configured to be connected to a word line; and one electrode of each of the at least one voltage-dividing capacitor is connected to the gate electrode, and the other electrode of each of the at least one voltage-dividing capacitor is connected to the source electrode.

Inventors:
HOU ZHAOZHAO (CN)
BU SITONG (CN)
FANG YICHEN (CN)
ZHANG YU (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2021/074505
Publication Date:
August 04, 2022
Filing Date:
January 29, 2021
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C11/22
Foreign References:
CN112018185A2020-12-01
CN111696603A2020-09-22
CN101960531A2011-01-26
CN1409322A2003-04-09
Other References:
See also references of EP 4266312A4
Attorney, Agent or Firm:
SHENZHEN SCIENBIZIP INTELLECTUAL PROPERTY AGENCY CO.,LTD. (CN)
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