Title:
FILM FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/050112
Kind Code:
A1
Abstract:
The present invention provides a film forming method which is able to form a thin and uniform inorganic layer, thereby being capable of producing a gas barrier film that has high gas barrier properties and flexibility. In a film forming method according to the present invention, wherein an inorganic layer is formed on a long supporting body under a vacuum, while transporting the supporting body in the longitudinal direction, foreign materials adhering to a film formation surface of the supporting body are removed by having, before a film formation step wherein the inorganic layer is formed, an ablation step wherein the film formation surface of the supporting body is irradiated with light having a wavelength, the absorptance of which by the supporting body is 10% or less.
Inventors:
SEKI TOMOKAZU (JP)
IWASE EIJIRO (JP)
IWASE EIJIRO (JP)
Application Number:
PCT/JP2019/033672
Publication Date:
March 12, 2020
Filing Date:
August 28, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
C23C16/02; B32B9/00; B32B38/18; C23C14/02; C23C14/12; C23C14/56; C23C14/58; C23C16/44; C23C16/54; H01L21/316
Foreign References:
| JPS61248525A | 1986-11-05 | |||
| JP2009046710A | 2009-03-05 | |||
| JP2011071038A | 2011-04-07 | |||
| JP2011141199A | 2011-07-21 | |||
| JPH11243000A | 1999-09-07 |
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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