Title:
FULL-TRANSITION METAL NITRIDE CURRENT COLLECTOR/ELECTRODE SUPERCAPACITOR, AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/151327
Kind Code:
A1
Abstract:
A full-transition metal nitride (MN) current collector/electrode supercapacitor, and a preparation method therefor, relating to the technical field of electronic functional materials and devices. Impurities on the surface of a substrate material are first removed by washing; and then a high-density and high-conductivity transition MN film is deposited on the surface of the substrate as an electron transport current collector material, and a loose, porous and low-conductivity transition MN film is directly and continuously grown on the current collector as an electrode material by regulating deposition process parameters. Both the current collector and the electrode are continuously grown from a transition MN. Material performance is cut by simply changing film deposition process parameters. The process is simple, convenient and feasible, the cost is low, various film deposition technologies are available for selection, and the process applicability is high. The problems of layered cracking and large contact resistance caused by poor adhesion force, lattice mismatch, and thermal expansion coefficient difference between different current collector and electrode materials are solved. The power density, thermal stability, and long-term service reliability of the supercapacitor are greatly improved.
Inventors:
ZHOU DAYU (CN)
SUN NANA (CN)
LIU WENWEN (CN)
SHI SHUYAN (CN)
YU FENGYUN (CN)
HOU XIAODUO (CN)
GAO XIAOXIA (CN)
SUN NANA (CN)
LIU WENWEN (CN)
SHI SHUYAN (CN)
YU FENGYUN (CN)
HOU XIAODUO (CN)
GAO XIAOXIA (CN)
Application Number:
PCT/CN2019/118045
Publication Date:
July 30, 2020
Filing Date:
November 13, 2019
Export Citation:
Assignee:
UNIV DALIAN TECH (CN)
International Classes:
H01G11/30; H01G5/011
Domestic Patent References:
| WO2008068677A1 | 2008-06-12 |
Foreign References:
| CN109659157A | 2019-04-19 | |||
| CN109659156A | 2019-04-19 | |||
| CN109712820A | 2019-05-03 | |||
| DE3210420A1 | 1983-09-22 | |||
| CN108010742A | 2018-05-08 |
Other References:
R. LUCIO-PORTO, BOUHTIYYA S., PIERSON J.F., MOREL A., CAPON F., BOULET P., BROUSSE T.: "VN Thin Films as Electrode Materials for Electrochemical Capacitors", ELECTROCHIMICA ACTA, vol. 141, 20 September 2014 (2014-09-20), pages 203 - 211, XP055723690, ISSN: 0013-4686, DOI: 10.1016/j.electacta.2014.07.056
ETIENNE EUSTACHE, FRAPPIER RENAUD, PORTO RAŪL LUCIO, BOUHTIYYA SAÏD, PIERSON JEAN-FRANÇOIS, BROUSSE THIERRY: "Asymmetric Electrochemical Capacitor Microdevice Designed with Vanadium Nitride and Nickel Oxide Thin Film Electrodes", ELECTROCHEMISTRY COMMUNICATIONS, vol. 28, 31 March 2013 (2013-03-31), pages 104 - 106, XP055723692, ISSN: 1388-2481, DOI: 10.1016/j.elecom.2012.12.015
ETIENNE EUSTACHE, FRAPPIER RENAUD, PORTO RAŪL LUCIO, BOUHTIYYA SAÏD, PIERSON JEAN-FRANÇOIS, BROUSSE THIERRY: "Asymmetric Electrochemical Capacitor Microdevice Designed with Vanadium Nitride and Nickel Oxide Thin Film Electrodes", ELECTROCHEMISTRY COMMUNICATIONS, vol. 28, 31 March 2013 (2013-03-31), pages 104 - 106, XP055723692, ISSN: 1388-2481, DOI: 10.1016/j.elecom.2012.12.015
Download PDF:
Previous Patent: VACUUM CLEANER
Next Patent: EXTENDED BATTERY LIFETIME FOR NB-IOT DEVICES VIA COVERAGE CLASS SPECIFIC PAGING
Next Patent: EXTENDED BATTERY LIFETIME FOR NB-IOT DEVICES VIA COVERAGE CLASS SPECIFIC PAGING