Title:
α-Ga2O3 SEMICONDUCTOR FILM
Document Type and Number:
WIPO Patent Application WO/2021/064803
Kind Code:
A1
Abstract:
This α-Ga2O3 semiconductor film has a nunchuck structure 20 which is observed in a planar TEM bright-field image taken with an electron beam incident in parallel with the <001> direction, and has, at both ends of a thin line-like region 22, rod-like regions 24, 24 wider than the thin line-like region 22.
Inventors:
FUKUI HIROSHI (JP)
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
WATANABE MORIMICHI (JP)
YOSHIKAWA JUN (JP)
Application Number:
PCT/JP2019/038558
Publication Date:
April 08, 2021
Filing Date:
September 30, 2019
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/16; H01L21/365; H01L21/368
Foreign References:
| JP2016051825A | 2016-04-11 | |||
| JP2016025256A | 2016-02-08 | |||
| JP2016100593A | 2016-05-30 |
Other References:
KAMERO KENTARO: "Crystal Growth and Device Applications of Corundum-Structured Gallium Oxid", JOURNAL OF THE SOCIETY OF MATERIALS SCIENCE, vol. 65, no. 9, September 2016 (2016-09-01), Japan, pages 631 - 637, XP055811095
Attorney, Agent or Firm:
ITEC INTERNATIONAL PATENT FIRM (JP)
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