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Patent Searching and Data


Title:
GAA TRANSISTOR AND PREPARATION METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/160556
Kind Code:
A1
Abstract:
Provided by the present invention are a GAA transistor and a preparation method therefor, and an electronic device. The preparation method comprises: providing a substrate; forming an epitaxial layer on the substrate, wherein the epitaxial layer comprises sacrificial layers and silicon layers which are alternately stacked, and the layer in the epitaxial layer that is in contact with the substrate is a bottom sacrificial layer; etching the substrate and the epitaxial layer, so as to form a fin; etching the remaining epitaxial layer in the fin, so as to etch a source electrode region and a drain electrode region on a first side and a second side of the fin, wherein a final end point of the etching is lower than the highest position of the bottom sacrificial layer in the remaining epitaxial layer, and is not lower than a connection position between the substrate and the bottom sacrificial layer, and the first side and the second side of the fin are a pair of opposite sides of the fin; and manufacturing a source electrode in the source electrode region, and then manufacturing a drain electrode in the drain electrode region.

Inventors:
ZHANG WEI (CN)
XU MIN (CN)
CHEN KUN (CN)
YANG JINGWEN (CN)
XU SAISHENG (CN)
WANG CHEN (CN)
WU CHUNLEI (CN)
YIN RUI (CN)
Application Number:
PCT/CN2021/099380
Publication Date:
August 04, 2022
Filing Date:
June 10, 2021
Export Citation:
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Assignee:
UNIV FUDAN (CN)
SHANGHAI INTEGRATED CIRCUIT MFG INNOVATION CENTER CO LTD (CN)
International Classes:
H01L21/336; H01L29/08; H01L29/78
Foreign References:
CN110581173A2019-12-17
CN111223778A2020-06-02
CN109427905A2019-03-05
CN112908853A2021-06-04
CN213958961U2021-08-13
US20140353753A12014-12-04
Attorney, Agent or Firm:
SHANGHAI HUIHAN INTELLECTUAL PROPERTY LAW FIRM (CN)
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