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Patent Searching and Data


Title:
GALLIUM NITRIDE POWER DEVICE AND FABRICATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/057874
Kind Code:
A1
Abstract:
A gallium nitride power device, comprising: a gallium nitride substrate (10); cathodes (20); a plurality of gallium nitride bump structures (12) that are disposed on the gallium nitride substrate (10) and between the cathodes (20), wherein grooves are formed between adjacent gallium nitride bump structures (12); an electron mobility layer, which covers the top parts and side surfaces of the gallium nitride bump structures (12); a gallium nitride layer (14), which is disposed on the electron mobility layer and fills the grooves, the electron mobility layer being used to form a conductive channel region at the arranged position, and the electron mobility of the conductive channel region being higher than the electron mobility of the gallium nitride layer (14); a plurality of second conductivity type regions (15), each second conductivity type region (15) extending downwards into a groove from the top part of the gallium nitride layer (14), and the top parts of the gallium nitride bump structures (12) being higher than the bottom parts of the second conductivity type regions (15); and an anode (30), which is disposed on the gallium nitride layer (14) and the second conductivity type regions (15).

Inventors:
LIU SIYANG (CN)
LI NINGBO (CN)
WANG DEJIN (CN)
XIAO KUI (CN)
ZHANG CHI (CN)
LI SHENG (CN)
TAO XINYI (CN)
SUN WEIFENG (CN)
SHI LONGXING (CN)
Application Number:
PCT/CN2020/117576
Publication Date:
April 01, 2021
Filing Date:
September 25, 2020
Export Citation:
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Assignee:
UNIV SOUTHEAST (CN)
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/06; H01L21/329; H01L29/872
Foreign References:
CN103337459A2013-10-02
CN107083535A2017-08-22
JP2007281231A2007-10-25
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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