Title:
GAS BARRIER FILM AND METHOD FOR PRODUCING GAS BARRIER FILM
Document Type and Number:
WIPO Patent Application WO/2013/145943
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a gas barrier film which exhibits high gas barrier performance, while having excellent transparency, durability and flexibility; and a method for producing the gas barrier film. A gas barrier film of the present invention has a composition ratio of nitrogen to silicon in the film, namely N/Si of 1.00-1.35, a film density of 2.1-2.4 g/cm3, a film thickness of 10-60 nm, and a thickness of a mixed layer of 5-40 nm, said mixed layer being at the interface between a substrate and an inorganic film.
Inventors:
MOCHIZUKI YOSHIHIKO (JP)
FUJINAWA JUN (JP)
FUJINAWA JUN (JP)
Application Number:
PCT/JP2013/053977
Publication Date:
October 03, 2013
Filing Date:
February 19, 2013
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
B32B9/00; C23C16/42
Foreign References:
| JP2011179104A | 2011-09-15 | |||
| JP2009235510A | 2009-10-15 | |||
| JP2010059528A | 2010-03-18 | |||
| JP2011063851A | 2011-03-31 | |||
| JP2012193449A | 2012-10-11 |
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
Mochitoshi Watanabe (JP)
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