GAS BARRIER FILM PRODUCTION METHOD

WIPO Patent Application WO/2015/137389

A1

The present invention addresses the problem of providing a gas barrier film production method by which, when a gas barrier layer is formed by plasma CVD on a low phase difference base material that is subjected to roll-to-roll transportation, the low phase difference base material is prevented from floating up from a film forming roller, and a gas barrier layer having uniform gas barrier properties in the surface direction of the low phase difference base material can be formed. This gas barrier film production method, in which a gas barrier layer is formed on a base material by plasma CVD whilst the base material is subjected to roll-to-roll transportation, is characterized by: the base material being a low phase difference base material having a retardation value of equal to or less than 4nm; and the inclusion of a heat treating step in which, before the gas barrier layer is formed, the low phase difference base material is heated such that the temperature of the low phase difference base material is equal to or greater than 40℃, and equal to or lower than the glass transition temperature of the low phase difference base material.

JPH0639701	INDUSTRIAL APPLICABILITY [Title of Invention] Method for forming a sedimentary film
JP3791060	FORMATION OF DIAMOND LIKE CARBON FILM ON RUBBER OR RESIN
JP5214778	Substrate processing equipment and semiconductor device manufacturing method

WACHI AYAKO (JP)

PCT/JP2015/057132

September 17, 2015

March 11, 2015

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KONICA MINOLTA INC (JP)

C23C16/02; B32B38/00; B32B38/18

WO2007111075A1

2007-10-04

JP2000355071A	2000-12-26
JPH01502182A	1989-08-03
JP2012106421A	2012-06-07

KOYO INTERNATIONAL PATENT FIRM (JP)
Patent business corporation Mitsuaki international patent firm (JP)

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