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Patent Searching and Data


Title:
GATE DRIVE CIRCUIT OF SWITCHING CIRCUIT, AND CONTROL CIRCUIT OF SWITCHING POWER SUPPLY
Document Type and Number:
WIPO Patent Application WO/2021/117821
Kind Code:
A1
Abstract:
According to the present invention, a switching circuit 100 includes a high-side transistor MH and a low-side transistor ML of N channels. A switch SW1 and a rectifying element D1 of a PMOS transistor are provided in series between a constant voltage line through which a constant voltage VREG is supplied and a bootstrap line VB. A comparison circuit 210 operates by taking the high-side power supply voltage VBS as a power supply, the high-side power supply voltage being the voltage difference between the bootstrap line VB and a switching line VS, and generates a detection signal OVDET that indicates a magnitude relationship between the high-side power supply voltage VBS and a threshold voltage VTH. A level shift circuit 220 level-shifts the detection signal OVDET down to a signal of which the ground voltage is low. A PMOS driver 212 drives the switch SW1 asynchronously with switching of the low-side transistor ML in response to an output of the level shift circuit 220.

Inventors:
NIIKURA HIROKI (JP)
Application Number:
PCT/JP2020/046076
Publication Date:
June 17, 2021
Filing Date:
December 10, 2020
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H03K17/06; H02J1/02; H02M1/08; H02M3/155; H03K17/687
Foreign References:
JP2014023269A2014-02-03
JP2011234430A2011-11-17
JP2019140752A2019-08-22
Attorney, Agent or Firm:
MORISHITA Sakaki (JP)
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