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Patent Searching and Data


Title:
GATE DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2021/060152
Kind Code:
A1
Abstract:
The present invention uses a simpler circuit structure to provide a high-side driver for a gate drive circuit that uses an N-channel MOSFET. A high-side driver circuit that is a circuit that drives a power semiconductor switch. The high-side driver circuit comprises a main switch N-channel MOSFET that has a drain terminal that is connected to a plus-side Vdc of a power supply and has a source terminal that is connected to an OUT terminal for a signal that drives the power semiconductor switch, a charge storage circuit that stores charge from the Vdc, and a voltage detection–capable switch that detects the voltage difference between an output terminal of the charge storage circuit and the Vdc and, upon detecting that the output terminal voltage of the charge storage circuit is at least a specific voltage higher than the voltage of a plus-side Vcc of the power supply, applies part or all of the output voltage of the charge storage circuit to a gate terminal of the main switch N-channel MOSFET.

Inventors:
OGAWA Hiroo (5-5-30 Chiyoda, Sakado cit, Saitama 14, JP)
Application Number:
JP2020/035313
Publication Date:
April 01, 2021
Filing Date:
September 17, 2020
Export Citation:
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Assignee:
TAMURA CORPORATION (higashi-ooizumi nerima-k, Tokyo 11, JP)
International Classes:
H03K17/06; H03K17/567
Attorney, Agent or Firm:
ITO Mitsuru (HAKUWA Bldg..3-2-1 Kojimach, Chiyoda-ku Tokyo 14, JP)
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