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Title:
HIGH-FLATNESS, LOW-DAMAGE AND LARGE-DIAMETER MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2020/077849
Kind Code:
A1
Abstract:
The present application relates to the technical field of crystalline material processing. Disclosed are a high-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, and a manufacturing method therefor. The surface roughness of the substrate is less than or equal to 0.2 nm, a scratch die ratio of the substrate is less than 10%, a pit ratio is less than 0.1/cm2, and a bump ratio is less than 0.1/cm2. The manufacturing method comprises the following steps: performing fully-solidified abrasive treatment on monocrystalline silicon carbide, and then performing chemical mechanical polishing treatment to obtain the high-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate, wherein the solidified abrasive treatment comprises line cutting and grinding wheel grinding, abrasive particles are solidified on cutting lines, and the abrasive particles are solidified on a grinding wheel. The high-flatness, low-damage and large-diameter monocrystalline silicon carbide substrate manufactured by the manufacturing method in the present application has low surface roughness, scratch die ratio, pit ratio and bump ratio, good surface data, and small thickness deviation, curvature, and warping degree.

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Inventors:
LIANG QINGRUI (CN)
WANG HANGUAN (CN)
WANG RUI (CN)
SHI WENLING (CN)
Application Number:
PCT/CN2018/123718
Publication Date:
April 23, 2020
Filing Date:
December 26, 2018
Export Citation:
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Assignee:
SICC CO LTD (CN)
International Classes:
C30B29/36; B24B1/00; B24B27/06; B24B37/04; B24B55/02
Foreign References:
CN103935990A2014-07-23
US6046112A2000-04-04
CN104465720A2015-03-25
CN102533124A2012-07-04
Other References:
See also references of EP 3666937A4
Attorney, Agent or Firm:
BEIJING JUNHUI INTELLECTUAL PROPERTY AGENT OFFICE (ORDINARY PARTNERSHIP) (CN)
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